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1

Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions

Lee, Edwin W., Ma, Lu, Nath, Digbijoy N., Lee, Choong Hee, Arehart, Aaron, Wu, Yiying, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.23 MB

english, 2014

2

Interface traps at Al 2 O 3 /InAlN/GaN MOS-HEMT -on- 200 mm Si

Kumar, Sandeep, Remesh, Nayana, Dolmanan, S.B., Tripathy, S., Raghavan, S., Muralidharan, R., Nath, Digbijoy N.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.28 MB

english, 2017

3

Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer

Kumar, Sandeep, Gupta, Priti, Guiney, Ivor, Humphreys, Colin J., Raghavan, Srinivasan, Muralidharan, R., Nath, Digbijoy N.

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.86 MB

english, 2017

4

Investigation of Ta₂O₅ as an Alternative High-k Dielectric for InAlN/GaN MOS-HEMT on Si

Kumar, Sandeep, Kumar, Himanshu, Vura, Sandeep, Pratiyush, Anamika Singh, Charan, Vanjari Sai, Dolmanan, Surani B., Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy N.

Journal:

IEEE Transactions on Electron Devices

Year:

2019

File:

PDF, 8 KB

2019

5

Material-to-Device Performance Correlation for AlGaN-based Solar-blind p-i-n Photodiodes

Kalra, Anisha, Rathkanthiwar, Shashwat, Rangarajan, Muralidharan, Raghavan, Srinivasan, Nath, Digbijoy

Journal:

Semiconductor Science and Technology

Year:

2019

Language:

english

File:

PDF, 1.29 MB

english, 2019

6

Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme

S, Niranjan, Guiney, Ivor, Humphreys, Colin J., Sen, Prosenjit, Muralidharan, Rangarajan, Nath, Digbijoy N.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2020

File:

PDF, 3.36 MB

2020

7

Polarization engineered 1-dimensional electron gas arrays

Nath, Digbijoy N., Park, Pil Sung, Esposto, Michele, Brown, David, Keller, Stacia, Mishra, Umesh K., Rajan, Siddharth

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.57 MB

english, 2012

8

Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization

Sung Park, Pil, Nath, Digbijoy N., Krishnamoorthy, Sriram, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 1.50 MB

english, 2012

9

Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors

Hyeongnam Kim, Digbijoy Nath, Siddharth Rajan, Wu Lu

Journal:

Journal of Electronic Materials

Year:

2013

Language:

english

File:

PDF, 404 KB

english, 2013

10

Molecular beam epitaxy of N-polar InGaN

Nath, Digbijoy N., GuÌr, Emre, Ringel, Steven A., Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 693 KB

english, 2010

11

Polarization-engineered GaN/InGaN/GaN tunnel diodes

Krishnamoorthy, Sriram, Nath, Digbijoy N., Akyol, Fatih, Park, Pil Sung, Esposto, Michele, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 533 KB

english, 2010

12

Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion

Sung Park, Pil, Reddy, Kongara M., Nath, Digbijoy N., Yang, Zhichao, Padture, Nitin P., Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.27 MB

english, 2013

13

Large area single crystal (0001) oriented MoS2

Laskar, Masihhur R., Ma, Lu, Kannappan, Santhakumar, Sung Park, Pil, Krishnamoorthy, Sriram, Nath, Digbijoy N., Lu, Wu, Wu, Yiying, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 2.18 MB

english, 2013

14

Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

Esposto, Michele, Krishnamoorthy, Sriram, Nath, Digbijoy N., Bajaj, Sanyam, Hung, Ting-Hsiang, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 581 KB

english, 2011

15

[IEEE 2012 70th Annual Device Research Conference (DRC) - University Park, PA, USA (2012.06.18-2012.06.20)] 70th Device Research Conference - Methods for attaining high interband tunneling current in III-Nitrides

Growden, Tyler A., Krishnamoorthy, Sriram, Nath, Digbijoy N., Ramesh, Anisha, Rajan, Siddharth, Berger, Paul R.

Year:

2012

Language:

english

File:

PDF, 649 KB

english, 2012

16

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

Yang, Jie, Cui, Sharon, Ma, T. P., Hung, Ting-Hsiang, Nath, Digbijoy, Krishnamoorthy, Sriram, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.21 MB

english, 2013

17

p-type doping of MoS2 thin films using Nb

Laskar, Masihhur R., Nath, Digbijoy N., Ma, Lu, Lee, Edwin W., Lee, Choong Hee, Kent, Thomas, Yang, Zihao, Mishra, Rohan, Roldan, Manuel A., Idrobo, Juan-Carlos, Pantelides, Sokrates T., Pennycook, St

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.06 MB

english, 2014

18

Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs

Hung, Ting-Hsiang, Park, Pil Sung, Krishnamoorthy, Sriram, Nath, Digbijoy N., Rajan, Siddharth

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 1.24 MB

english, 2014

19

Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures

Park, Pil Sung, Nath, Digbijoy N., Rajan, Siddharth

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 367 KB

english, 2012

20

[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - Lateral energy band engineering of Al2O3/III-nitride interfaces

Hung, Ting-Hsiang, Park, Pil Sung, Krishnamoorthy, Sriram, Nath, Digbijoy N., Bajaj, Sanyam, Rajan, Siddharth

Year:

2014

Language:

english

File:

PDF, 973 KB

english, 2014

21

[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - Demonstration of 2D/3D p-MoS2/n-SiC junction

Lee, Edwin W., Ma, Lu, Nath, Digbijoy N., Lee, Choong Hee, Wu, Yiying, Rajan, Siddharth

Year:

2014

Language:

english

File:

PDF, 322 KB

english, 2014

22

[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - Electron transport in large-area epitaxial MoS2

Nath, Digbijoy N., Ma, Lu, Lee, Chong Hee, Lee, Edwin, Arehart, Aaron, Wu, Yiying, Rajan, Siddharth

Year:

2014

Language:

english

File:

PDF, 409 KB

english, 2014

23

[IEEE 2013 71st Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2013.06.23-2013.06.26)] 71st Device Research Conference - Determination of trap energy levels in AlGaN/GaN HEMT

Yang, Jie, Cui, Sharon, Ma, T. P., Hung, Ting-Hsiang, Nath, Digbijoy, Krishnamoorthy, Sriram, Rajan, Siddharth

Year:

2013

Language:

english

File:

PDF, 1.01 MB

english, 2013

24

Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces

Hung, Ting-Hsiang, Krishnamoorthy, Sriram, Esposto, Michele, Neelim Nath, Digbijoy, Sung Park, Pil, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.23 MB

english, 2013

25

Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3

Hung, Ting-Hsiang, Sasaki, Kohei, Kuramata, Akito, Nath, Digbijoy N., Sung Park, Pil, Polchinski, Craig, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 909 KB

english, 2014

26

Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar In[sub x]Ga[sub 1−x]N

Nath, Digbijoy N., Gür, Emre, Ringel, Steven A., Rajan, Siddharth

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2011

Language:

english

File:

PDF, 1015 KB

english, 2011

27

Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1

Ma, Lu, Nath, Digbijoy N., Lee, Edwin W., Lee, Choong Hee, Yu, Mingzhe, Arehart, Aaron, Rajan, Siddharth, Wu, Yiying

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.39 MB

english, 2014

28

A study of electrically active traps in AlGaN/GaN high electron mobility transistor

Yang, Jie, Cui, Sharon, Ma, T. P., Hung, Ting-Hsiang, Nath, Digbijoy, Krishnamoorthy, Sriram, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.18 MB

english, 2013

29

[IEEE 2013 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Columbus, OH, USA (2013.10.27-2013.10.29)] The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications - Interface charge engineering in GaN-based MIS-HEMTs

Hung, Ting-Hsiang, Krishnamoorthy, Sriram, Nath, Digbijoy Neelim, Park, Pil Sung, Rajan, Siddharth

Year:

2013

Language:

english

File:

PDF, 1.52 MB

english, 2013

30

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

Bajaj, Sanyam, Hung, Ting-Hsiang, Akyol, Fatih, Nath, Digbijoy, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.29 MB

english, 2014

31

N-Polar III–Nitride Green (540 nm) Light Emitting Diode

Akyol, Fatih, Nath, Digbijoy N., Gür, Emre, Park, Pil Sung, Rajan, Siddharth

Journal:

Japanese Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 585 KB

english, 2011

32

Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors

Yang, Zhichao, Nath, Digbijoy N., Zhang, Yuewei, Khurgin, Jacob B., Rajan, Siddharth

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.09 MB

english, 2015

33

Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs

Park, Pil Sung, Krishnamoorthy, Sriram, Bajaj, Sanyam, Nath, Digbijoy N., Rajan, Siddharth

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.56 MB

english, 2015

34

Negative differential resistance in GaN tunneling hot electron transistors

Yang, Zhichao, Nath, Digbijoy, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.08 MB

english, 2014

35

Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier

Yang, Zhichao, Zhang, Yuewei, Nath, Digbijoy N., Khurgin, Jacob B., Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 652 KB

english, 2015

36

[IEEE 2015 73rd Annual Device Research Conference (DRC) - Columbus, OH, USA (2015.6.21-2015.6.24)] 2015 73rd Annual Device Research Conference (DRC) - Modeling and experimental demonstration of sub-10 nm base III-nitride tunneling hot electron transistors

Yang, Zhichao, Zhang, Yuewei, Krishnamoorthy, Sriram, Nath, Digbijoy N., Khurgin, Jacob B., Rajan, Siddharth

Year:

2015

Language:

english

File:

PDF, 1.28 MB

english, 2015

37

Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET

Bhattacharjee, Shubhadeep, Kolla, Lakshmi Ganapathi, Nath, Digbijoy, Bhat, Navakanta

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 873 KB

english, 2015

38

“Erratum: “Polarization engineered 1-dimensional electron gas arrays” [J. Appl. Phys. 111, 043715 (2012)]”

Nath, Digbijoy N., Park, Pil Sung, Esposto, Michele, Brown, David, Keller, Stacia, Mishra, Umesh K., Rajan, Siddharth

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 352 KB

english, 2012

39

Optical-Phonon-Limited High-Field Transport in Layered Materials

Chandrasekar, Hareesh, Ganapathi, Kolla Lakshmi, Bhattacharjee, Shubhadeep, Bhat, Navakanta, Nath, Digbijoy N.

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 2.51 MB

english, 2016

40

Making consistent contacts to graphene: effect of architecture and growth induced defects

Krishna Bharadwaj, B, Nath, Digbijoy, Pratap, Rudra, Raghavan, Srinivasan

Journal:

Year:

2016

Language:

english

File:

PDF, 1.36 MB

english, 2016

41

Intrinsic limits of channel transport hysteresis in graphene-SiO 2 interface and its dependence on graphene defect density

Krishna Bharadwaj, B, Chandrasekar, Hareesh, Nath, Digbijoy, Pratap, Rudra, Raghavan, Srinivasan

Journal:

Journal of Physics D Applied Physics

Year:

2016

Language:

english

File:

PDF, 907 KB

english, 2016

42

Surface State Engineering of Metal/MoS 2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability

Bhattacharjee, Shubhadeep, Ganapathi, Kolla Lakshmi, Nath, Digbijoy N., Bhat, Navakanta

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.63 MB

english, 2016

43

Electron mobility in few-layer Mo x W 1-x S 2

Chandrasekar, Hareesh, Nath, Digbijoy N

Journal:

Materials Research Express

Year:

2015

Language:

english

File:

PDF, 1.07 MB

english, 2015

44

Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

Yang, Zhichao, Zhang, Yuewei, Krishnamoorthy, Sriram, Nath, Digbijoy N., Khurgin, Jacob B., Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2016

Language:

english

File:

PDF, 729 KB

english, 2016

45

[IEEE 2016 74th Annual Device Research Conference (DRC) - Newark, DE, USA (2016.6.19-2016.6.22)] 2016 74th Annual Device Research Conference (DRC) - Current gain above 10 in sub-10 nm base III-nitride tunneling hot electron transistors with GaN/AlN emitter

Yang, Zhichao, Zhang, Yuewei, Krishnamoorthy, Sriram, Nath, Digbijoy N., Khurgin, Jacob B., Rajan, Siddharth

Year:

2016

Language:

english

File:

PDF, 256 KB

english, 2016

46

Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors

Rathkanthiwar, Shashwat, Kalra, Anisha, Solanke, Swanand V., Mohta, Neha, Muralidharan, Rangarajan, Raghavan, Srinivasan, Nath, Digbijoy N.

Journal:

Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 2.22 MB

english, 2017

47

High responsivity in molecular beam epitaxy grown β-Ga 2 O 3 metal semiconductor metal solar blind deep-UV photodetector

Singh Pratiyush, Anamika, Krishnamoorthy, Sriram, Vishnu Solanke, Swanand, Xia, Zhanbo, Muralidharan, Rangarajan, Rajan, Siddharth, Nath, Digbijoy N.

Journal:

Applied Physics Letters

Year:

2017

Language:

english

File:

PDF, 1.25 MB

english, 2017

48

[IEEE 2017 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2017.4.2-2017.4.6)] 2017 IEEE International Reliability Physics Symposium (IRPS) - Trap assisted avalanche instability and safe operating area concerns in AlGaN/GaN HEMTs

Shankar, Bhawani, Soni, Ankit, Singh, Manikant, Soman, Rohith, Chandrasekar, Hareesh, Mohan, Nagaboopathy, Mohta, Neha, Ramesh, Nayana, Prabhu, Shreesha, Kulkarni, Abhay, Nath, Digbijoy, Muralidharan,

Year:

2017

Language:

english

File:

PDF, 1.69 MB

english, 2017

49

UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio > 10 7

kumar, Sandeep, Pratiyush, Anamika Singh, Dolmanan, Surani B., Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy N.

Journal:

Applied Physics Letters

Year:

2017

Language:

english

File:

PDF, 1.23 MB

english, 2017

50

Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors

Singh, Vikash K., Nath, Digbijoy N.

Journal:

physica status solidi (a)

Year:

2017

Language:

english

File:

PDF, 605 KB

english, 2017